The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM Module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
주요기능
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 100ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Optional industrial temperature range of -40°C to +85°C, designated IND
Notes: **This pricing is BUDGETARY, for comparing similar parts. Prices are in
U.S. dollars and subject to change. Quantity pricing may vary
substantially and international prices may differ due to local
duties, taxes, fees, and exchange rates. For volume-specific prices
and delivery, please see the price and availability page
or contact an authorized distributor.
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