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Maxim >
제품 >
고주파 ASIC
시험 및 측정
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시뮬레이션 모델
Device Models Accurate device simulation models are essential for successful high-frequency IC design. Accurate modeling is the most significant factor affecting first-pass success rate and therefore meeting demanding development schedules. Below is an example of simulated-vs-measured results from one of our customers:

Simulated vs. measured gain and input return loss of an LNA, as presented in the IEEE paper, Low Power Silicon BJT LNA for 1.9GHz, by Kucera and Lott".
We determine our SPICE simulation models through proprietary, closed-form extraction routines using device data obtained with direct-on-wafer measurements from DC through 50GHz. The simulation model libraries feature:
- Specific libraries for each process and QuickChip Array
- Junction temperature range of -55°C to +125°C
- Up/Down/Nominal libraries available for each array and process, representing fast/slow/nominal process conditions
- Scaling generic device models for full custom design
- Models for all IC devices-including resistors, capacitors, diodes, and bondpads
- Accurate models of high-frequency behavior, including noise, slew rate, and distortion
- Continuously variable temperature modeling (most simulator formats)
Models are generated using statistical parameter extractions to ensure close match between process specifications and model results. In production, we insure model quality and conformance to process targets by regular sampling of production lots. Sample wafers are subject to a full spectrum of DC and AC modeling measurements, insuring conformance over the broadest possible operating range. Package Models Another equally important issue when designing RF ASICs is package modeling capability. Our package modeling group extracts the crucial inductance and capacitance parasitics via full 3-D electromagnetic package simulations. Some of the key features of our package models: - Self and mutual parasitics for all pins
- Customization possible to accommodate unique die size / bondpad / and downbond configurations
- Models accurate to within measurement accuracy of VNA and TDR test equipment
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